ASI2010 transistor equivalent, npn silicon rf power transistor.
* PG = 5 dB min. at 10 W/ 2,000 MHz
* Hermetic Microstrip Package
* Omnigold™ Metalization System
L
G
H J
F I K M NP
DIM A B
MINIMUM
inches / mm
MAXIMU.
up to 2300 MHz.
PACKAGE STYLE .250 2L FLG
A ØD C E .060 x 45° CHAMFER
B
FEATURES:
* PG = 5 dB min. at 10 W/ 2,000.
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